CORBEIL ESSONNES, France--Altis Semiconductor, the joint-venture fab venture between IBM Corp. and Infineon Technologies AG, today announced it will use a low-k dielectric resin from The Dow Chemical Co. for 0.13-micron copper chip production next year. The decision follows IBM's selection of Dow Chemical's SiLK material for its own 0.13-micron copper processes earlier this year (see April 3 story).
Altis said it plans to use the SiLK resin to produce 0.13-micron custom logic chips for telecommunications, computer peripherals and wireless applications. The combination of copper interconnects and Dow's resin for low-k insulators will enable electrical signals to propagate 37% higher than conventional aluminum and silicon-dioxide structures on ICs, according to Altis.
Production and delivery of 0.13-micron chips using the low-k material will begin at the end of 2001. Altis said it is currently in pilot production of the technology in its Corbeil-Essones fab.
"We believe by integrating SiLK resin now, we will be able to leverage our investment in low-k as we transition to 0.10-micron technology," said Caroline Boulenger, senior process engineer at Altis.
According to Dow Chemical, based in Midland, Mich., developed SiLK resins for interlayer dielectric (ILD) applications in copper dual damascene processing and aluminum/tungsten gapfill technologies. The spin-on organic polymer has a k constant 2.6, said Dow Chemical. The company said SiLK resins are stable at temperatures up to 450°C and have the highest glass transition temperature (Tg > 490°C) among all organic candidates evaluated for ILD applications.