MUNICH -- Fujitsu Ltd.'s Microelectronics Europe GmbH subsidiary today announced the development of a 30-GHz BiCMOS process for mobile communications and wireless applications. The new process, called UESBIC4, will be used to produce Fujitsu's MB15H series of radio-frequency large-scale integrated devices with double the performance of previously available BiCMOS ICs, said the company.
Transistors in the bipolar section of the BiCMOS are characterized by a "U-groove" isolated double-polysilicon emitter-base, self-aligned structure, which Fujitsu said dramatically improves the frequency performance. Fujitsu said it is able to extend the operating frequency range far over 3 GHz.
The process uses bipolar transistor widths down to 0.2 micron. With a transit frequency (ft) of30 GHz, a noise figure (NF) of 0.6dB can be achieved, said Fujitsu. The CMOS gate length in the BiCMOS process is 0.35 micron. Fujitsu said it is using trench isolation technique in the new BiCMOS processes to minimize crosstalk and allow suitable functioning in high frequency circuits. A new thin metal-insulator-metal (MIM) capacitor offers capacitance of 2.8fF per square micrometer, said the company.
The new process will be targeted at a range of wireless devices, including those serving third-generation (3G) mobile phones, such as WCDMA, which require low-power dissipation.