TORONTO--Micromem Technologies Inc. here said its nonvolatile magnetic memory technology performed favorably in recent tests performed by Honeywell International Inc.'s Federal Manufacturing & Technologies unit. The tests also underscored the relationship of thin-film process control with read speeds of the nonvolatile memories, according to the Canadian company.
In the testing of one device, Honeywell FM&T reported that the nonvolatile memory technology was capable of write speeds of 2,000 nanoseconds and read speeds of 160 ns, said Micromem. A second device tested by Honeywell's center for High Technology Materials in Albuquerque, N.M., demonstrated write speeds of 840 ns and read speeds of 44 ns with "significant improvement in energy usage," reported Micromem.
The Toronto company said these tests demonstrated slower read speeds than memory cells tested in November. The technology demonstrated read speeds of 6.4 ns in those earlier tests. Micromem concluded that variations in thin-film composition cause fluctuation in the resistance of on-chip sensors. Impurity reduction through control of thin-film processes will decrease resistance and contribute to increased read speeds, Micromem concluded.