Hitachi, LSI Logic strike R&D pact for copper, embedded DRAM, 0.10-micron devices
TOKYO--Hitachi Ltd. and LSI Logic Corp. here today disclosed a broad technology agreement aimed at jointly developing and exchanging 0.10-micron device architectures and next-generation processes. The pact covers copper and low-k interconnect processes, advanced lithography, and direct write electron-beam technology for chip manufacturing.
The first results of the technology alliance will be LSI Logic's introduction of embedded DRAM for system-on-a-chip designs in the middle of next year. The embedded DRAM will be based on Hitachi's 0.20-micron process technology. LSI Logic said it will use the embedded DRAM in its CoreWare design methodology and expects to begin shipping SOC products with the memory cores in mid-2000.
Under the agreement, Hitachi will act as a foundry for system-on-a-chip ICs with embedded DRAM.
"This comprehensive partnership will advance Hitachi's and LSI Logic's technology offerings and will be beneficial for both companies in serving their global customers," declared Kunio Hasegawa, executive vice president of semiconductor and integrated circuits at Hitachi.
Hitachi and LSI Logic said research teams from both companies have already begun working together in the U.S. and Japan on a variety of projects. The two companies intend to divide up technology development with each contributing their strengths in R&D projects. For example, Hitachi said it will contribute copper-processing expertise in the development of advanced interconnect architectures while LSI Logic will focus on low-k dielectrics for insulators.
"The strategic partnership utilizes the combined resources of two industry leaders to address the most costly and complex technology challenges associated with ever-shrinking geometries," said Joe Zelayeta, LSI Logic executive vice president of worldwide operations. "The culmination of this alliance will maximize returns on R&D investments of the respective companies, while assisting both of us in meeting the ongoing challenges associated with the rapidly accelerating requirements of new technology."
In advanced interconnects, the two companies plan development of copper and low-k processes for 0.13-micron devices. LSI Logic and Hitachi said the alliance will also develop 193-nanometer lithography, reticle technology, prototyping techniques and mass manufacturing solutions.
The two company also intend to combine their research on direct write e-beam technology for future applications.