MELVILLE, N.Y.-- General Semiconducto Inc. here has announced the first offering in a new family of low-voltage power MOSFETs. The new GENFET products are designed to improve the efficiency of dc-to-dc conversion circuits that power high-performance microprocessors in desktop and notebook computers.
General Semiconductor's low voltage power MOSFETs use a proprietary high-cell-density trench technology that provides a very low gate charge per unit of on-resistance, in addition to fast switching times.
The GENFET devices are optimized for the synchronous rectification function performed in a dc-to-dc converter. These components provide the very low on-resistance required for the MOSFET portion of the circuit in leading edge converter designs.
For desktop computers the offering includes the GFP70N03 in a thru-hole TO220 and GFB70N03 in a surface mount TO-263. In a dc-to-dc converter with 16-amp output, the GFB70N03 delivers 80%, efficiency and 90% at 3-amp output. For notebook computers the offering includes the GF4420 in a surface mount SO-8 package.
"The demanding power supply specifications for next-generation microprocessors place increasing importance on MOSFETs designed to optimize switching at high frequencies with the least amount of current losses," said Matthew O'Reilly, vice president of marketing and business development at General Semiconductor.
The GENFET line is designed at General Semiconductor's Silicon Valley design center and fabricated in a foundry relationship with Mosel Vitelic Inc. of Hsinchu Science Park, Taiwan.
According to Michael Liang, vice president of foundry business at Mosel Vitelic, "Our DRAM equipment set is ideally suited to General Semiconductor's high-density proprietary trench MOSFET process. I am very excited about the opportunity to partner with General Semiconductor in the launching this new product line."