SANTA CLARA, Calif. -- Applied Materials Inc. said Wednesday (August 27, 2003) that its Black Diamond and BLO-k low-k dielectric films have been used by Toshiba Corp. within its 90-nanometer CMOS4 manufacturing process technology in the Oita, Japan facility.
Toshiba is using Black Diamond and BLO-k with its TC300 family of ASICs, which are being used to create integrated circuits for wireless, networking and server equipment, Applied said.
Applied added that low-k films have presented significant integration issues in the transition from research and development to production, but that, by working together, Applied and Toshiba have resolved these problems.
"Our TC300 family is targeted at next-generation, high-end applications ranging from portable wireless devices to high-speed networking and server products. Through a combination of design and manufacturing technologies, including 11 layers of copper wiring and Applied Materials' low k films, we are able to meet the most advanced performance and low power requirements for these applications. For example, integrating Black Diamond and BLOk has enabled us to reduce power consumption by almost 50 percent and capacitance by 16 percent," said Masakazu Kakumu, technology executive of Toshiba Corporation Semiconductor Company, in statement issued by Applied Materials.
Applied Materials' Black Diamond bulk dielectric film and BLO-k process for barrier and etch stop applications are deposited using the company's Producer chemical vapor deposition (CVD) machine.
"In addition to providing Toshiba with the best low k technology, our goal is to now offer process extendibility and support that can speed time to market for their future products to 65-nm and beyond," said . Farhad Moghadam, group vice president and general manager of Applied Materials' dielectric systems and modules business group, in the same statement.