RALEIGH, North Carolina -- Gallium nitride specialist Nitronex Corp. said Tuesday (September 30, 2003) that working with Rockwell Collins it had demonstrated a radio frequency GaN HEMT with an output power of 120-watts.
Additionally the company announced that U.S. Patent No. 6,617,060 had been issued to Nitronex on September 9, 2003 and is entitled "Gallium Nitride Material and Methods." The patent teaches process technology used for growing GaN semiconductor layers on silicon substrates and supports Nitronex's Sigantic technology.
"This is a valuable addition to Nitronex's portfolio and is of strategic importance as it captures very broad protection for depositing device-quality gallium nitride on industry standard silicon wafers," said Kevin Linthicum, Nitronex's chief technology officer, in a statement.
Nitronex used the Sigantic method to fabricate the 120-W device employing a baseline process developed for 3G-WCDMA mobile communications applications. Rockwell Collins packaged and tested the device at their Cedar Rapids facility.
The results reported Tuesday were from a 39-mm gate width device pulse tested with a pulse width of 11.4 microseconds at 5 percent duty cycle at 2-GHz and 28-volts. At 2.0-dB into compression the device exhibited a gain of 11.3-dB with an efficiency of over 39 percent, Nitronex said.
"We have many applications at Rockwell Collins for these devices especially in our government systems programs, such as Data Link 16 programs, weapons data links, Joint Tactical Radio Systems (JTRS), and flight navigation," said Don Landt of Rockwell Collins Advanced Technology Center, in the same statement.
Linthicum added, "This level of performance and positive feedback from Rockwell echoes similar responses we have received from customers evaluating our technology for use in wideband 3G commercial applications where linear power and efficiency are of utmost importance."