GLOUCESTER, Mass. -- Varian Semiconductor Equipment Associates Inc. is working with Integrated System Engineering AG (ISE), a supplier of technology CAD software, to develop advanced doping and diffusion models for semiconductor devices beyond the 90-nanometer node, Varian said Tuesday (March 16, 2004).
The models are expected to help understanding of future doping requirements and applications, Varian said.
No indication was given of when the models would be available or on what basis they would be distributed.
"Our joint development work with ISE will encompass the entire doping regime including mixed species implantation with special emphasis on the impact of ion implant angle and low energy implantation as well as plasma doping," said Sandeep Mehta, Varian Semiconductor's director of strategic applications, in a statement.
"The collaboration with Varian Semiconductor ensures that our joint customers have predictive TCAD to develop their new technologies," added Lars Bomholt, ISE's vice president of applications, in the same statement.