SEOUL, South Korea--Samsung Electronics Co. Ltd. Thursday (April 29) announced a new, faster version of its 2-gigabit NAND flash memory device, based on 90-nm technology.
Samsung has boosted the speed on the device from 16.4- to 24.1-MB/s. This new, high-speed NAND flash memory has improved sequential data-read/write speed from 50- to 30-ns.
Using 90-nm manufacturing process, the device will be available in three forms: single chip 2-Gbit; dual die package 4-Gbit; and quad die package 8-Gbit.
The quad die package 8-Gbit flash memory has 1-Gbytes of storage density in a single package that can be an alternative memory solution for existing storage media such as small-size disk drives in tablet PCs and other diverse applications in the future.