SCHWALBACH, Germany -- Samsung Electronics Co. Ltd. has developed a chemical vapor deposition (CVD) method for laying down aluminum interconnect in DRAMs produced using a 70-nanometer manufacturing process, the company said Thursday (May 27).
The company also said that it expected to unveil "70-nm class" DRAMs before the end of 2004.
Existing DRAM circuit-wiring processes have employed physical vapor deposition (PVD) method in which thin films are formed by sputtering a metal target. However, due to the problem of forming voids PVD has been problematic at the 90-nm manufacturing node and is not expected to scale, Samsung said.
With the use of CVD not only is the problem of cavitations addressed, but also the electrical properties of the wiring are improved, Samsung said claiming that aluminum CVD is "an essential process technology in manufacturing 70-nanometer DRAMs".
It should also be able to reduce wiring-related manufacturing costs by about 20 percent, as it does not require planarization and cleaning process, which have been required with PVD.
Samsung said it has applied the aluminum CVD process to 90-nm 512-Mbit DRAM samples and plans to unveil 70-nm DRAMs employing this process technology by the end of the year.