Fairchild Semiconductor International announced the FDZ299P, the industry's best solution when combining electrical and thermal performance with size. This new p-channel MOSFET's high-performance PowerTrench® technology is housed in an ultra-small, 1.5 × 1.5 mm BGA (ball grid array) packageoffering a 75% size reduction compared to the standard SSOT-6 or TSSOP-6 MOSFETs currently used in similar applications. This makes the FDZ299P an ideal solution for power-management applications in cell phones, PDAs, portable music players, GPS receivers, and digital cameras.
Fairchild's FDZ299P, at 80 mW × 2.25 mm² = 180, offers a 75% better Footprint Figure of Merit (FFOM) when compared to a standard TSSOP-6 device with an FFOM of 80 mW × 9.0 mm² = 720. A MOSFET's FFOM (RDS(on) × footprint size in mm²) is a critical parameter for evaluating performance.
The FDZ299P also reduces parasitic system power drain by providing low-loss switching (the maximum steady-state current is 4.6 A). The package height of the FDZ299P (maximum 0.8 mm) allows this product to be used under RF shields and internal subassemblies and displays, fulfilling the growing industry demand for products with thinner, low-profile packages.\
In addition to packaging advantages, this new device provides extremely low RDS(on) (55 mW @ VGS = -4.5 V and 80 mW @ VGS = -2.5 V) and low gate charge (@VGS = 4.5 V, Qg ≤ 9 nC).
"Typical MOSFETs in standard packages of comparable size cannot dissipate above 150 mW or handle a steady-state current above 350 mA," said Chris Winkler, Fairchild's Market Development Manager for portable products applications. "The FDZ299P, with its 1.7 W of dissipation, leads the way when it comes to thermal performance and current-handling capability."
The addition of this MOSFET BGA further expands Fairchild's innovative package offering that includes FLMP, MicroPak, and DQFN packaging.