Palo Alto, Calif. The ATF-531PB is a single-voltage Enhanced mode pHEMT FET in a miniature leadless chip carrier package designed for wireless applications up to 6GHz.
The FET has a 0.6dB noise figure with +38 dBm third-order output intercept point (OIP3) and 4-volt operation for lower power consumption and reduced heat generation. It is targeted for first and second stage front-end LNAs, and for use in radio cards, PAs, cellular base stations, fixed wireless and WLANs, and other high performance applications in the 50 MHz to 6 GHz range.
The device is specified for operation in 900 MHz, 1.9 GHz and 2.1 GHz cellular/PCS/WCDMA frequency bands as well as for fixed wireless, WLAN and other services operating in the 50 MHz to 6 GHz frequency range. Its +24.5 dBm linear output power capability (at 1 dB gain compression) is the right level for pre-driver amplifiers.
The FET comes in a thermally efficient 2.0 mm x 2.0 mm x 0.75 mm 8-pad industry-standard leadless plastic chip carrier JEDEC DRP-N LPCC package.
Pricing: $2.16 in quantities of 5,000 to 10 000
Agilent Technologies, www.agilent.com