Santa Clara, CA--September 23, 1996--Applied Materials (Santa Clara, CA) launches a unique, fully integrated system that combines a new chemical vapor deposition (CVD) titanium nitride (TiN) chamber with a coherent physical vapor deposition (PVD) titanium (Ti) chamber.
By combining the two chambers on the Centura platform, semiconductor manufacturers can deposit sequential layers of Ti and CVD TiN in high-aspect-ratio metal structures under vacuum--thereby controlling the growth of unwanted oxide between processing steps.
A critical part of the Liner TxZ system is the company's CVD TiN technology, which is now available on the "xZ-series" deposition chamber.
Marathon testing has shown a MWBC of greater than 3000 wafers, with average in-film particle density below 0.05 per squre cm. at 0.2 m. The CVD TiN process provides high conformal coverage in 0.25 m diameter, 4.1 aspect ratio contacts at low temperatures.
A typical configuration for the Liner TxZ Centura is one Preclean II chamber, one Coherent Ti chamber, and two CVD TxZ TiN chambers.
Commitments for Liner TxZ Centura systems have been received from customers in the U.S. and Asia-Pacific regions, with systems available in the fourth calendar quarter of 1996. Extension of the integrated Ti/TiN CVD/PVD technology to the company's Endura PVD platform is scheduled for 1997.
The Liner TxZ system is part of a large-scale corporate initiative at Applied Materials to develop an array of integrated processing sequences. The company's Process Sequence Integration (PSI) program is coordinating complete modules of sequentially linked process technologies to manufacture specific structures on a semiconductor device.
Chipmakers can pre-qualify these modules in the Applied Materials demonstration labs prior to installation in the fab.
A group of systems designed to fabricate a complete structure in the semiconductor device can be installed and started up directly to production.
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