San Jose, CA--September 23, 1996--Atmel Corp. (San Jose, CA) announced that it has added the industry's first 3-V, one-Mbit electrically erasable programmable read-only memory (EEPROM) to its family of low-voltage circuits.
The AT28LV010 operates from 3 V to 3.6 V, and it is organized 128 kbits by 8 bits.
This new Atmel memory offers designers read access speeds to 200 ns with page write cycle times of 10 ms. Power supply current is rated at 15 mA in the active mode and only 20 mA at standby.
A standard-power, 5-V device, the AT28C010, is also available. This one-Mbit memory offers speeds to 120 ns with a 10 ms page write cycle time. The power supply current is rated at 40 mA in the active mode and 200 mA at standby.
In addition to this EEPROM circuit, the company recently went into volume production of a (2.7 V) 64k EEPROM (AT28LV64) and a 3-V 256k device (AT28LV256).
The AT28LV256 is available in a 32-pin TSOP and PLCC packages. Prices for the AT28LV010 in the TSOP commercial temperature range start at $26 each in quantities of more than 10,000 units.
Atmel also markets 3-V 22V10-type circuits, 3-V 256 kbit, 512 kbit, and one-Mbit Flash memories, a trio of 3-V EEPROMs, the complete family of 1.8-V serial-interface EEPROMs, and a complete family of 3-volt gate arrays with densities from 4k to 160 kgates.
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