Danvers, MA--May 28, 1997--Ibis Technology Corp. (Danvers, MA) announced that it has been awarded four research and development contracts, totaling $400,000, by various government agencies including the National Aeronautical and Space Administration (NASA), the U.S. Air Force, and the Defense Special Weapons Agency.
These contracts, most of which are anticipated to be completed during 1997, will focus on leakage reduction in SIMOX-SOI wafers with thinner buried oxide layers, non-destructive testing of SIMOX-SOI wafers for certain quality parameters, and radiation hardened testing of specially processed SIMOX-SOI substrates.
SIMOX-SOI wafers are silicon-on-insulator wafers which enable the production of integrated circuits with advantages over circuits constructed on bulk silicon or epitaxial wafers. The company produces SIMOX-SOI wafers on advanced proprietary Ibis 1000 oxygen implantation equipment, utilizing proprietary processing technologies which the company believes will enable it to produce SIMOX-SOI wafers for demanding high-volume commercial applications.
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