Danvers, MA--May 21, 1997--Ibis Technology Corp., a supplier of SIMOX-SOI (Separation by Implantation of Oxygen/Silicon-on-Insulator) wafers to the semiconductor manufacturers, announced that Mitsubishi Electric Corp. (MELCO) reported that it is marketing a device fabricated on SIMOX-type silicon-on-insulator (SOI) wafers, most of which are Ibis products being supplied by Mitsubishi Materials Corp. (MMC). MMC is Ibis' strategic partner who has the exclusive rights to sell Ibis' SIMOX-SOI wafers in Japan.
MELCO stated that it is marketing a new SOI-based 560-kgate master array that uses 0.35 m, three-level metal processes, operating at 1-2V and 50-150 MHz, respectively, and having the power consumption of 0.05 micro W/MHz/gate. The new array's performance characteristics are well suited to high-speed/low-power applications such as components for portable electronic products. MELCO indicated that it intends to begin taking orders for the new devices in July, 1997 with sampling quantities becoming available in November, 1997.
Using the new device, MELCO announced that it has prototyped a 192-kbit SRAM, which is 55 percent faster than a corresponding device built on conventional bulk silicon, and an ATM IC operating on 2V at 156 MHz, with power consumption estimated to be one-third that of bulk devices.
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