Munich and Cupertino, Calif.--Nov. 24, 1997--Siemens announced the sample shipment of 64M in quarter micron (0.25 (m).
This synchronous DRAM (SDRAM) is one of the smallest dies on the market available from any manufacturer. The first samples from the Dresden (Germany) fab are being shipped to customers for qualification now. Volume shipments will be available early 1998.
The memory devices are being manufactured with the quarter-micron process (0.25 (m), the most advanced CMOS manufacturing processes available today. Compared with standard 64M DRAMs manufactured with 0.35-(m technology, these memory devices will only need approximately one-third the silicon area.
Like all Siemens's DRAMs, quarter micron is designed with trench cell technology, and operational voltage is 3.3 V. It will meet the Intel PC-100 specification. The 64M SDRAM will be available in 16M(4, 8M(8, and 4M(16 configurations in TSOP54 package and on SO-DIMM and standard DIMM modules.
With four state-of-the-art wafer fabs: Dresden, (Germany), ProMOS (Hsinchu, Taiwan), North Tyneside (UK), and White Oak (near Richmond, Virginia, to be opened in the first half of 1998), Siemens Semiconductors --the only European DRAM supplier--will have established 64M wafer fabrication in quarter micron technology on three continents.
Anita Giani (408) 777-4546
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