Hsin Chu, Taiwan--August 24, 1998--Taiwan Semiconductor ManufacturingCo. (Hsin Chu) has ramped its 0.25-m process to high yield productionto support sharply accelerating customer demand.
Volume production has led to alow defect density of less than 0.2 defects per square inch, which translatesinto over 70 percent probe yield for a for a large single-poly, five-layermetal die.
First tape-outs using the 0.18-m process are expected to takeplace in Q4 this year, with initial production releaseanticipated late Q1 1999.
By the end of 1998, TSMC will also begin production of a low-voltage, low-power0.25-m process for mobile applications; a shrink, 0.22-m, processfor cost reduction of large die; and a logic-based embedded DRAM processfor digital signal processing, mobile, and networking applications.
TSMC's 0.25-m capacity is ramping to 15,000 wafers per monthin 1998 with additional capacity planned for 1999.
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