San Jose, CA--May 31, 2000--Numerical Technologies, Inc. announced the successful fabrication of 25 nmtransistor gates produced entirely by optical lithography. The 25 nm (0.025micron) transistor gates on the integrated circuit (IC) were achieved usingNumerical's patented phase-shifting technology and DUV 248 nm opticallithography.
This achievement marks the first time 248 nm lithography equipment hasproduced a 25 nm transistor gates, the company said.
The 25 nm gates represent some of the smallest gates ever patterned byconventional optical lithography.
"The fabrication of 25 nm gates is a dramatic step forward from ourFebruary announcement that 50nm transistors had been manufactured using ourtechnology," stated Y. C. (Buno) Pati, CEO of Numerical Technologies."With Numerical Technologies' phase shifting, optical lithography will nolonger be the limiting factor in advancing integrated circuits."
Technical details of the results and methods used to fabricate the devicewill be presented at the 44th International Conference on Electron, Ion, andPhoton Beam Technology & Nanofabrication (IEDM 3-Beam Conference) currentlytaking place in Palm Springs, CA.
Numerical Technologies, Inc.
San Jose, CA
Return to Headlines
Send electronic versions of press releases to firstname.lastname@example.org
For more information about isdmag.com e-mail email@example.com
Comments on our editorial are welcome.
Copyright © 1999 Integrated System Design Magazine