SOUTH PORTLAND, MAINE -Fairchild Semiconductor touts its FDZ5047N as an n-channel MOSFET on a ball-grid array (BGA) that is targeted at high-efficiency synchronous rectification dc/dc converters in notebooks and VRMs.
The result of the BGA packaging is a 30-V, PowerTrench device with a low on-resistance that the company says is equaled only with larger D2PAK TO-263 and TO-220 packages.
Typically, on-resistance for the FDZ5047N is only 2.5 milliohms (3.5 milliohms max), said to be half that of the industry's highest-performance SO-8. Just 0.8 mm thick, the BGA has a package size of less than 28 mm2 and a profile one-fifth that of a TO-263, one-third that of a DPAK and one-half the thickness of an SO-8.
The figure of merit is 225 nC-milliohms for its 30-V device at a gate-to-source voltage of 4.5 V. Competitive devices with similar on-resistances in TO-220 packages have a figure of merit of 540 nC-milliohms, the company said. Besides the FDZ5047N's 5 x 5.5-mm package, the new device is offered in a 5 x 6-mm (FDZ5045N) version. The FDZ5045N is said to offer the lowest on-resistance.
The FDZ50487N is easier to route in a single-sided pc board layout as a result of having drain contacts on only three sides. Suggested pricing for the FDZ5047N is $2.25 each in 10,000-unit quantities.
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EETInfo No. 613