Santa Clara, Calif. - Vishay Siliconix touts the Si4320DY and Si7356DP 30-volt n-channel TrenchFETs as the first power MOSFETs in an SO-8 package to break through the 4-milliohm on-resistance barrier.
These devices are derived from the company's new Gen II process technology, which can lay down 300 million cells per square inch and provides a specific on-resistance of 12 milliohms/mm2, claimed as a 30 percent improvement over previous-generation devices. The new process is also designed to build structures that optimize switching performance. In that context, the Si4320DY and Si7356DP have a gate charge of 45 nanocoulombs and a Qgd-to-Qgs ratio of 0.8 to offer substantial shoot-through protection.
The Si4320DY, in a Little Foot SO-8 package, and the Si7356DP, in a PowerPAK SO-8, are designed to serve as the low-side FET in synchronous buck dc/dc converters in notebook computers, and for secondary synchronous rectification in telecom applications. They provide an on-resistance of 4 milliohms at Vgs = 4.5 V and 3 milliohms at Vgs = 10 V.
The resulting in-circuit performance is said to provide higher efficiency and, thus, increased battery life. In a typical two-phase application, these devices have demonstrated an improvement of about 1 percent and a reduction of device temperature by 7 degrees C, the company said.
Samples and production quantities are available now, with lead times of four to six weeks for larger orders. Pricing starts at 58 cents each in quantities of 100,000.
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