Greensboro, NC, USA - RF Micro Devices has introduced a family of Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) high-power transistors and is sampling to top-tier cellular infrastructure and WiMAX base station customers. For cellular infrastructure and WiMAX base station OEMs dependant on maximizing power and efficiency, RFMD’s GaN transistors provide higher at-package matching impedance, higher power density and wider bandwidth performance when compared with silicon LDMOS devices. The high power devices show excellent peak drain efficiency up to 67 % at UMTS and up to 60 % at WiMAX frequency bands. RFMD has achieved high gain of 16 dB, high power density of up to 4 W/mm at 28 V and 1,000 hour high temperature reliability results. RFMD’s GaN HEMT transistors for the wireless cellular market are targeted to the UMTS or 3G base station segment and include the RF3820 (8 W), RF3912 (60 W), RF3913 (90 W) and RF3914 (120 W). RFMD’s GaN HEMT transistors targeted to the emerging WiMAX base station segment include the 2.5 GHz RF3916 (50 W), RF3917 (75 W), RF3918 (100 W) and 3.5 GHz RF3821 (8 W), RF3919 (50 W). RF Micro Devices, Greensboro, NC, USA. www.rfmd.com
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