LONDON Engineers from Qimonda AG, the memory making spinoff from Infineon Technologies, are set to report on a 58-nanometer DRAM manufacturing process technology at the International Electron Devices Meeting (IEDM) due to be held in San Francisco, Dec. 11 to 13, 2006.
The most advanced fully integrated and production-worthy technologies for producing dense DRAM memories are in the 70-nm to 80-nm range. Samsung Electronics Co. Ltd. announced it had begun mass producing 1-Gbit DRAMs using 80-nm process technology in August 2006.
Researchers from Qimonda (Munich, Germany) are expected to present on a fully integrated 58-nm process technology which they used to produce a 512-Mbit DRAM operating at between 1.2-V and 1.35-V, with access times that support data rates of 3.2-Gbits per second per pin. The abstract submitted to EE Times discusses the paper “A 58nm Trench DRAM Technology,” under the title "Smallest Integrated DRAM Technology."
The abstract goes on to say that the DRAM features an extended U-shaped cell structure, a metal-insulator-silicon trench capacitor with a high-k gate dielectric and metal-in-collar structure, and a k = 2.8 dielectric for use in back-end manufacturing of interconnections. The paper is number four in session 21.
Qimonda was formed as a memory-making spinoff from parent Infineon Technologies AG through an IPO in August 2006.