LONDON The high electron mobilities of some III-V compounds is making them prime candidates for future NMOS channel materials, with an indium-based gallium-arsenide (InGaAs) likely to be the material of choice, according to recent workshop organized by German company Aixtron AG and Sematech.
At the meeting, proponents of III-V expressed excitement over the manufacturability of materials based on previously underused III-V materials. One presenter suggested InGaAs, with a mobility performance of 6-10 times that of silicon, is the leading channel material for dual channel devices that may consist of germanium-based PMOS and III-V-based NMOS field-effect transistors.
Some delegates expressed concern that these materials-based solutions would not be developed in time for volume manufacturing, and that many issues that need to be addressed to realize performance improvement would not be resolved in time for devices at 22-nm and beyond.
Technologists also discussed and agreed that inserting III-V materials on Si devices poses several challenges, including lattice mismatch, poor interface quality, high-k dielectric growth and off-state current leakage. However, the scalability of metal-organic chemical vapor deposition (MOCVD) attracted a consensus as the most promising manufacturing process, with clustered chambers for III-V and high-k suggested as an effective tool configuration for increased throughput.
Opening speaker Robert Chau of Intel urged researchers to collaborate on resolving these and other issues, adding: "By 2012, we should have a real working solution for III-V."