LONDON Taiwan Semiconductor Manufacturing Co. Ltd. has said it has qualified a 0.18-micron embedded flash memory (embFlash) process technology family intended for applications in automotive, analog and power-sensitive applications.
The family of processes includes a baseline 1.8 to 5 volt standard process, an ultra-low leakage (uLL) process, and specific automotive-qualified embedded flash IP blocks.
The baseline 0.18-micron embFlash process supports 5 volt I/O interface applications and features a low voltage flash IP that operates at 1.8 volts. Several flash memory blocks and a customization service are available. TSMC said the process is suitable for motor controls on refrigerators, washing machines and air conditioners.
The uLL refinement of the embFlash process operates at 1.8-V and features a 95 percent leakage current reduction compared to the baseline process. Built upon the uLL devices, CPU, standard cell library, and SRAM can save up to 85, 90, and 95 percent reduction in standby current respectively compared to the baseline process. A low power flash memory IP supports up to 80 percent lower standby current and 60 percent lower active current. The ULL refinement is aimed at power-sensitive and mobile applications.
The high-data-retention (HDR) member of the 0.18-micron embedded flash family operates at 1.8V/3.3V and has been qualified for automotive quality requirement AEC-Q100. Extensive test methodology has also been developed to meet the stringent automotive requirements in power-train, security systems, body systems, and infotainment.
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