Winchester, UK - Telefunken Semiconductors (Heilbronn, Germany) is claiming to have achieved a run rate of more than 100 million units per year supply to its customers of high performance SiGe power ICs utilizing HBT technology.
The company claims the passing of the production milestone validates the features of Telefunken's low cost SiGe power HBT technology in comparison to high cost III-V-based (GaAs, InP, GaN) HEMT technology and market acceptance and market share gains of the company's technology.
Telefunken Semiconductors' SiGe HBT process has been used in manufacturing at Heilbronn, Germany, since 1998. With SiGe PDKs, Telefunken Semiconductors customers are able to design high performance integrated circuits with analog frequencies up to 80 GHz and sufficient power capability. Telefunken Semiconductors offers HICUM models for HBTs with Monte-Carlo-Simulations based on production statistics. The cost efficient high speed SiGe power technology is well-suited for applications in the area of telecommunications and high-speed data transfer such as DECT, CDMA, 5.8-GHz WLAN and power amplifier WCDMA, 802.11, or Bluetooth range extension.
Telefunken Semiconductors sees the volume of 100 million units per year as demonstrating the manufacturing capabilities of and acceptance of SiGe as the industry standard for wireless amplification.
Telefunken Semiconductors foundry is a specialty analog and mixed signal facility with ISO Automotive and Industrial Class Certifications. The company offers state-of-the-art contract semiconductor foundry services at its manufacturing location in Heilbronn, Germany. The Foundry Group services a range of customers with reliable wafer production from 0.8 μm to 0.35 μm. Telefunken Semiconductors processes offers analog and mixed signal foundry services for RF, power management, and high voltage high temperature automotive applications. The wafers are produced in 6 in inch and will be available in 8 inch by Q3 of 2010.