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China researchers claim faster MRAM

8/27/2010 06:30 PM EDT
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unknown multiplier
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re: China researchers claim faster MRAM
unknown multiplier   8/28/2010 11:25:21 AM
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Lot of key details missing. Sounds like partial spin torque to me.

UdaraW
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re: China researchers claim faster MRAM
UdaraW   8/28/2010 9:42:09 PM
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True, the article skips over quite significant technical details that are of basic interest to EEs. However, the combined research outcome that has been presented here appears to be of substantial value. Therefore, could someone please provide links to one or two of the key research papers that outlines these two discoveries? Looking at this article from a different point of view, it is quite interesting to note how the global research happen in these modern times. On one hand, a Japanese team demonstrates how MRAMs could be switched electrically to increase density beyond what has been possible so far. On the other hand, a Chinese team declares how electrically switched MRAMs could be made faster and more energy efficient. Once proven, these two technologies combined, presents quite an opportunity for a breakthrough memory product. Therefore, the concept could prove to be of interest not only to electrical engineers, but also to investors and venture-capitalists alike. Another point of interest, in these first few months of the post-recession area, is on how novel technologies that are completely based in the far-east come into being. Earlier, this was not the case as US and the West had some part to play in the majority of these. Is it not that the far-east appears to come out stronger after the recession?

littletiger
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re: China researchers claim faster MRAM
littletiger   8/29/2010 10:24:59 PM
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http://jap.aip.org/resource/1/japiau/v108/i4/p043909_s1

resistion
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re: China researchers claim faster MRAM
resistion   8/30/2010 1:27:14 PM
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Thanks for the link. It looks like has to use both MRAM and FeRAM materials.

UdaraW
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re: China researchers claim faster MRAM
UdaraW   8/31/2010 6:11:02 AM
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Thanks for the link to the publication littletiger. In the reference list of this one, I will try to locate (and post) a publication referring to the Japanese team who demonstrated how electrical switching could be utilized to perform perpendicular recording that increase MRAM densities. By the way, can some one please point out a direct link to the latter publication from Japanese team?

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