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Rice's silicon memristor aims to beat HP

9/1/2010 09:32 PM EDT
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resistion
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re: Rice's silicon memristor aims to beat HP
resistion   9/1/2010 10:09:03 PM
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Silicon oxide, not silicon dioxide. If deliberately oxygen-deficient, that's a special requirement, not regular process sio2.

unknown multiplier
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re: Rice's silicon memristor aims to beat HP
unknown multiplier   9/2/2010 12:14:56 AM
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There is a Nano Lett paper on this. The voltage is key. Begs comparison to flash programming.

Sanjib.A
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re: Rice's silicon memristor aims to beat HP
Sanjib.A   9/2/2010 4:33:15 PM
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It's time to add a new word in the dictionary - "Memristors". It is great to know that Rice University could prove the concept design of ReRAM using silicon instead of titanium. But I'm not certain reading this article whether Rice could really achieved the performance what HP might have achieved using titanium. 10,000 read/erase/write cycles is quite low compared to the current Flash parts, correct? Again a question come to my mind: there are other new memory technologies such as MRAM/FeRAM etc are also going through commercialization cycle. Which one is going to win? Any thoughts?

Patk0317
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re: Rice's silicon memristor aims to beat HP
Patk0317   9/2/2010 6:08:34 PM
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Sanjib, I guess it depends on where the Flash is being used. For example 10,000 R/W cycles is considered standard for flash used in programmable logic.

Gil Russell
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re: Rice's silicon memristor aims to beat HP
Gil Russell   9/3/2010 8:19:08 AM
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The mechanism sounds similar to that described in Axon TC's "Programmable Metallization Cell" in which AgS forms a conductive path in a chalcogenide matrix. Axon claims 5 ns symmetric access times and is compatible with voltage and geometric scaling. I'm looking forward to this technology coming out of stealth. Wonder what Rice plans to do with it? Research in the resistive memory segment is showing a lot of promise, is simple, the arrays can be stacked for increased density, have good to excellent duration (some are nearly non-wearing) and are scalable in both voltage and geometry. Industry roadmaps are made of things like this...,

Larry M
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re: Rice's silicon memristor aims to beat HP
Larry M   9/3/2010 1:26:37 PM
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10,000 cycles should also be adequate for memory keys and SD/SDHC/XD/etc. cards used in cameras.

Microchip_Manny
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re: Rice's silicon memristor aims to beat HP
Microchip_Manny   9/3/2010 5:28:56 PM
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A better and more exciting application for this technology is to enable the re-birth of analog computing. Imagine a filter that can be reconfigured or tuned in the field or during manufacturing. A great as digital processing is today, it could not match the performance of an analog solution. Think about an integrator and differentiator circuits alone. This would also provide the concept of non-volatile analog memory...WOW my mind is spinning wildly!!!

Skeptic
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re: Rice's silicon memristor aims to beat HP
Skeptic   9/3/2010 11:32:35 PM
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I'm not sure if this is the same mechanism as Axon's GeS devices but a quick check of the US Patent Office site reveals that there are already several issued patents on oxide-based devices, including silicon oxide. Are these guys late to the party or am I missing something here?

goafrit
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re: Rice's silicon memristor aims to beat HP
goafrit   9/4/2010 12:48:36 PM
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Will need a copy also when you are done.

Sanjib.A
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re: Rice's silicon memristor aims to beat HP
Sanjib.A   9/5/2010 3:23:29 AM
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I think using this in analog computing is a great idea! Could we build an array of programmable resistors? We could then make use of those programmable resistors in analog circuits. Pardon me...I don't understand the device physics of Memristor quite yet and my comment could sound absurd to the experts in this field. But just trying to draw some more ideas from experts interested in "analog computing" topic.

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