SAN JOSE, Calif. - Taking on TriQuint, Win Semiconductors and others, RF Micro Devices Inc. has added its gallium arsenide (GaAs) technology to its foundry services portfolio.
RF Micro currently provides a gallium nitride (GaN) foundry service. Now, RF Micro will begin providing a full suite of GaAs pseudomorphic high electron mobility transistor (pHEMT) technologies to foundry customers.
Specifically, RF Micro will make available three GaAs pHEMT technologies. The company's 0.3-micron pHEMT technology delivers high power and is optimized for X-band phased array power amplifiers (PAs) and 8-16 GHz wideband military electronic warfare jammers.
Its 0.25-micron pHEMT technology delivers low noise, medium power and high linearity and is targeted at applications including low noise front ends and transmitter MMICs. And its 0.6-micron pHEMT technology provides low noise and high linearity switching of RF signals and is designed for applications including wireless front ends and transmit/receive modules.
All of the process technologies are manufactured in RF Micro's Newton Aycliffe, United Kingdom fab.