SAN JOSE, Calif. - RF Micro Devices Inc. has struck again in the foundry arena.
RF Micro currently provides a gallium nitride (GaN) foundry service. This week, RF Micro added its gallium arsenide (GaAs) technology to its foundry services portfolio.
Now, the company has further expanded its foundry services to deliver multiple molecular beam epitaxial (MBE) platforms, epitaxial characterization and epitaxial development structures, including specialty and high-volume, arsenic- and phosphorus-based processes.
Its MBE foundry services team will help design an epilayer structure and MBE process to optimize the performance of an existing epistructure. It will develop structures, such as BiHEMTs, BiFETs, MOSFETs, VCELs and metamorphic.
It will provide a range of material offerings on gallium arsenide (GaAs) substrates, including GaAs, indium gallium arsenide (InGaAs), aluminum gallium arsenide (AlGaAs), indium gallium phosphide (InGaP) and aluminum indium phosphide (AlInP).
In a statement, Bob Van Buskirk, president of RF Micro's Multi-Market Products Group, said, "We have the industry's fastest cycle times, and we expect to use that as a key performance discriminator in our MBE foundry service. We have one of the world's largest MBE production facilities and two of the world's largest compound semiconductor wafer fabrication facilities in operation, which enable us to deliver a flexible set of MBE-related products and services while driving shorter time-to-market."
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