SAN JOSE, Calif. - Adesto Technologies Inc. said it has received an award from Darpa to develop and demonstrate CBRAM memory devices that operate at sub threshold voltages–a level that is more than 100 times lower than standard flash memory.
This could lead to memory and microcontroller devices that consume orders of magnitude lower power. Adesto has also partnered with the University of Virginia to combine CBRAM with low voltage microelectronic circuits.
Adesto-a memory startup funded by Applied Materials Inc. and others-is readying its first product-a conductive-bridging RAM (CBRAM). It is readying a 1-megabit serial interface flash/EEPROM device, based on the technology.
CBRAM is an low power, CMOS-compatible memory that is customized for a wide range of discrete and embedded markets.
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