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New material for semis said to beat silicon

2/1/2011 04:43 PM EST
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krisi
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re: New material for semis said to beat silicon
krisi   2/9/2011 4:36:52 PM
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Larger bandgap means lower leakage. That is basic physics. But it does not mean that you can replace silicon with any wider bandgap material. If that was the case silicon would be finished long time ago ;-)...dr Kris

sranje
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re: New material for semis said to beat silicon
sranje   2/4/2011 6:31:04 PM
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Colin rocks

h46av8r
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re: New material for semis said to beat silicon
h46av8r   2/4/2011 4:08:28 PM
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@selinz, graphene in its 2D form is a zero-bandgap semiconductor, or "semi-metal". That is, the conduction and valence bands just touch at a so-called Dirac point. However, the article is wrong in that graphene, as envisioned for transistors, would be patterned into ribbons. The lateral quantum confinement then does open a bandgap just like carbon nanotubes only un-rolled. In theory, you could control the bandgap by controlling the width of the ribbon. In fact, turn the ribbon 30 degrees and it goes metallic so in once piece of graphene you could go metal-semiconducting-metal i.e. the source and drain and interconnects are automatic. All this requires, however, controlling the ribbon width with atomic precision...

krisi
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re: New material for semis said to beat silicon
krisi   2/2/2011 6:40:45 PM
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good point @resistion...I work in compound semiconductor industry and defects are big issues (orders of magnitude behind silicon)...Krisd

resistion
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re: New material for semis said to beat silicon
resistion   2/2/2011 5:34:25 PM
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The big drawback is molybdenite is a compound, with extra potential for defects due to stoichiometry.

truworth
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re: New material for semis said to beat silicon
truworth   2/2/2011 9:22:56 AM
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krisi
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re: New material for semis said to beat silicon
krisi   2/2/2011 2:34:40 AM
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thank you @Neo1, but even 6.5A does not produce 100,000 factor in lowering the power, today's MOSFETs have gate oxide 20A thick or so, the difference is not that dramatic...the power "number" likely comes from the bandgap value, 1.8eV vs 1.1eV for silicon but this again highly misleading, there are several wider bandgap materials available, so what, some have bandgaps larger than 3eV, should we claim they offer 100,000,000 gains in lowering the power (if you calculate exp(-EA/kT) factor)...dr Kris

Neo10
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re: New material for semis said to beat silicon
Neo10   2/2/2011 2:24:26 AM
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I guess their 100,000 number comes from the maximal range i.e. the assumption that one can actually fabricate a device with 6.5 Angstroms gate thickness and make it switch like Si. But the diagram still shows the other junctions to be still Si, so what's the secret here?

krisi
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re: New material for semis said to beat silicon
krisi   2/1/2011 10:53:27 PM
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Colin, saying that a new material is 100,000 more efficient in power is a big stretch to say the least...for starters semiconductor material does not dissipate power per se but semiconductor devices build on on it do...second I highly doubt it will be 100,000 times, seem silly to claim that...plus really you are only talking about the new material for electron channel, everything else as your drawing shows is a silicon technology! dr Kris

Code Monkey
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re: New material for semis said to beat silicon
Code Monkey   2/1/2011 8:50:02 PM
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Maybe molybdenite processes will be ready about the same time EUV is ready for full-scale production, providing the next step in Moore's law.

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