SAN FRANCISCO - At the 2011 International Solid-State Circuits Conference (ISSCC) here, Hynix, Samsung and the Toshiba-SanDisk duo separately provided more details about their cutting-edge NAND parts.
At present, the duo of Toshiba Corp. and SanDisk Corp. appear to be the process technology leaders in the market. The companies, which have a joint manufacturing venture, are ramping up a 24-nm NAND line.
However, Micron Technology Inc. is seeking to retake the technology lead with a 20-nm NAND part. At a recent event, Micron showed the 64-Gbit, ''20-nm’’ part, which is expected to ship this year, said Jim Handy, an analyst with Objective-Analysis.
''While Micron may have discussed 20-nm at one of their analyst’s events, any silicon and process technology development is a collaboration between Intel and Micron as part of IM Flash Technologies. So it is really IMFT versus just Micron,'' according to a spokeswoman.
Each vendor claims to be the technology leader in NAND. At one time, Micron had the lead, when it announced its 25-nm NAND flash line. Now, it will jump to 20-nm, it was noted.
At ISSCC, meanwhile, Toshiba and SanDisk presented a paper about a 151-mm(square), 64-Gbit device, based on multi-level-cell (MLC) and 24-nm technology.
Hynix Semiconductor Inc. is ramping up a 26-nm NAND line. At ISSCC, Hynix talked about a 32-Gbit MLC line based on the technology. Market leader Samsung Electronics Co. Ltd. talked about a 64-Gbit, three-bit-per-cell line based on 27-nm. Samsung is shipping 27-nm NAND.