SAN JOSE, Calif. - Specialty foundry vendor TowerJazz Inc. has announced the availability of its latest silicon germanium (SiGe) foundry process.
The process, SBC18H3, is TowerJazz’s third-generation, 0.18-micron SiGe technology. It provides transistors with 240-GHz Ft and 260-GHz Fmax.
The technology is built on the same platform used for the prior two TowerJazz SiGe processes. The process addresses next-generation needs for high-speed interfaces in communication protocols such as Thunderbolt, optical fiber, and high-data rate wireless by improving performance while reducing noise and power consumption of key building blocks. SBC18H3 also targets applications such as automotive collision avoidance systems, millimeter-wave radar and GHz imaging.
SBC18H3 process design Kits (PDKs) include mm-wave components important for high speed designs such as a transmission-line toolbox, p-i-n diodes for RF switching, and support for small size MIM capacitors.
Tower Semiconductor Ltd., a specialty foundry chipmaker which trades under the name TowerJazz, recently announced it is proposing to buy a wafer fab belonging to Micron Technology Inc. in Nishiwaki City, Hyogo prefecture, Japan, for $140 million.