LONDON – The global market for power transistors is set to reach $13.1 billion in 2011, according to market research firm IC Insights Inc., an increase of 9 percent over 2010, which itself was a 44 percent increase over the market in 2009. Sales growth continues to be driven by a combination of automotive systems, portable products, alternative energy applications, and power conservation, the firm said.
There will be slight average selling price attrition on power transistors, according to IC Insights, which sees shipments rising 11 percent in 2011 to a record-high of 58.8 billion units worldwide due to above-average sales growth in automotive electronics, new renewable energy systems, battery-operated portable products, and more efficient power supplies in a range of equipment applications.
The market for modules built with insulated gate bipolar transistors (IGBTs) is expected to increase 10 percent to $2.5 billion in 2011, while the sales of IGBT transistor products and power FETs are forecast to grow 9 percent this year to $960 million and $6.9 billion, respectively.
Between 2010 and 2015, total power transistor revenues are expected to grow at a CAGR of 6.4 percent reaching $16.3 billion at the end of the forecast period. IC Insights' five-year forecast shows sales of low-voltage power FETs (up to 200 volts) rising at a CAGR of 6.7 percent to $16.4 billion by 2015. IGBT module sales are expected to increase by a CAGR of 7.0 percent to $3.2 billion in 2015 and discrete IGBT transistors are forecast to rise at an annual average of 6.5 percent to $1.2 billion in 2015.
The last paragraph said "...low-voltage power FETs (up to 200 volts) rising at a CAGR of 6.7 percent to $16.4 billion by 2015...", it seems not consitent with the graph (the biggest red bubble) followed below.
I think there could be typos or anything I misunderstand? Who can help please?
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