NEW YORK—Ramtron International Corp. Wednesday (July 6) announced broad sampling of its 64-kilobit ferroelectric random access memory (FRAM), billed as a drop-in replacement for 64-Kb EEPROM.
Ramtron's 64-Kb FM24C64C, built on the company's manufacturing line at IBM Corp., is suited for nonvolatile memory applications that require frequent or rapid writes, according to Ramtron (Colorado Springs, Colo.). In May, after several delays, Ramtron announced it was sampling its first products made by IBM under a foundry agreement.
FM24C64C is a 5-volt serial FRAM device that performs at bus speed without write delays, and supports up to 1 trillion read/write cycles—1 million times more than a comparable EEPROM device—Ramtron said. The FM24C64C offers low operation with 100 µA active current (at 100 kHz) and only 4 µA typical standby current, according to Ramtron.
The FM24C64C features a serial I2C interface, has an active current of 100 µA, and performs up to 1-MHz bus frequency, Ramtron said. The device is offered in an industry standard, RoHS compliant 8-pin SOIC package and operates over the industrial temperature range of -40°C to +85°C, the company said.