SEVILLE, Spain Ė The 'memristor' two-terminal non-volatile memory technology, in development at Hewlett Packard Co. since 2008, is on track to be in the market and taking share from flash memory within 18 months, according to Stan Williams, senior fellow at HP Labs.
"We have a lot of big plans for it and we're working with Hynix Semiconductor to launch a replacement for flash in the summer of 2013 and also to address the solid-state drive market," Williams told the audience of the International Electronics Forum, being held here.
A spokesperson for HP added that there is no definitive memristor product roadmap as yet, but confirmed that "HP has a goal to see memristor products by the end of 2013."
Williams said that the memristor metrics being achieved, in terms of energy to change a bit, read, write time, retention and endurance, were so compelling that flash replacement was effectively a done deal. "So in 2014/2015 we'll be going after DRAM and after that the SRAM market," Williams said indicating his confidence that the memristor would quickly become a universal memory.
Williams declined to discuss in detail the process technology, memory capacity or memory-effect material that Hewlett Packard and Hynix are working with. "We're running hundreds of wafers through a Hynix full-size fab. We're very happy with it." But Williams did disclose that the first commercial memory would be a multi-layer device.
When challenged over the cost of the technology, which would be the barrier to competing against the high-volume flash memory market, Williams said: "On a price per bit basis we could be an order of magnitude lower cost once you get the NRE [non-recurring expense] out of the way."
The memristor, named after the combination of memory and resistor, was originally a theoretical two-terminal device for which the electrical behavior was derived by Leon Chua in 1971. However, in 2008 researchers from HP published a paper in Nature that tied the hysterical I-V characteristics of two-terminal titanium oxide devices to the memristor prediction of Chua. "What we found is that moving a few atoms a fraction of a nanometer can change the resistance by three orders of magnitude," said Williams. "In fact many nanodevices have inherent memresistive behavior," he said.
HP has amassed some 500 patents around the memristor over the last three years. He also acknowledged that phase-change memory (PCM), Resistive RAM (RRAM) and other two-terminal memory devices are all memristor-type devices. Williams acknowledged that many other companies are working on metal-oxide resistive RAMs. He said that Samsung now has a bigger research team working on the technology than does HP.
Williams touted the cross-point nature of the memristor memory switch or resistive RAM device as a memory capacity advantage over flash memory. "Whatever the best in flash memory is, we'll be able to double that."
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Problem with FRAM is that it can't achieve equal or higher density than Memristors. We can use FRAM right now... through TI or Ramtron or who-ever. FRAM is cool but very expensive... and only available in low densities. 2012 is not the end of the world, it is maybe just the end of Flash? lol.
Go for it HP!! You can do it.
What good are memristors and other memory devices when the IT dept at my company will not allow me to send files bigger than 10MBytes through my email.
I think someone needs to invent and implement a "mem-IT" dept so I can send bigger files!
Platinum electrodes sandwiching titanium dioxide was an early manifestation of the RRAM/memristor. I am hearing that research groups have moved on to other contact materials and highly engineered stacks of metal-oxides layers. Clearly using fab friendly materials is one of the many things researchers are shooting for.
There are some schemes for dealing with the sneak paths, discussed in the literature.
Without a doubt, when implemented, this class of memory would have to be stacked in multiple layers, resulting in much less than 4F2.
But I think using Pt is an unattractive side of his memristor.
I asked Stan Williams about how they coped with bypass paths and whether there is a need for blocking diodes or access transistors (which would hurt the goal of 4F2) and he said they were not required - but would not say more.
I understand there are numerous access methods which get round this problem (pun) but I understand they add to complexity in the peripheral circuitry and sometimes in the matrix itself. So either way you hurt the goal of 4F2.
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