Breaking News
News & Analysis

Infineon to make power ICs on 300-mm wafers

10/12/2011 09:47 AM EDT
6 comments
NO RATINGS
More Related Links
View Comments: Threaded | Newest First | Oldest First
elctrnx_lyf
User Rank
Manager
re: Infineon to make power ICs on 300-mm wafers
elctrnx_lyf   10/12/2011 5:12:00 PM
NO RATINGS
does the thin wafers will have same current capacity?

chanj0
User Rank
Manager
re: Infineon to make power ICs on 300-mm wafers
chanj0   10/12/2011 7:25:29 PM
NO RATINGS
If resistance is indeed lower and heat is dissipated more efficiently with same current capacity, it means the efficiency is higher. It sounds a great improvement to me. Any further information and insight?

goafrit
User Rank
Manager
re: Infineon to make power ICs on 300-mm wafers
goafrit   10/12/2011 9:35:23 PM
NO RATINGS
I do not see this rush to lower feature size. Does it truly matter?

resistion
User Rank
CEO
re: Infineon to make power ICs on 300-mm wafers
resistion   10/13/2011 3:36:39 AM
NO RATINGS
Without it being mentioned, I guess these devices are still silicon, not SiC or GaN? Wafer thinning and warping is harder for lithography no doubt!

Peter Clarke
User Rank
Blogger
re: Infineon to make power ICs on 300-mm wafers
Peter Clarke   10/13/2011 8:34:10 AM
NO RATINGS
Yes this refers to silicon wafers. Although I am sure Infineon is working on silicon-carbide and gallium-nitride as well.

pinhead1
User Rank
Rookie
re: Infineon to make power ICs on 300-mm wafers
pinhead1   10/13/2011 5:16:07 PM
NO RATINGS
I am not aware of any SiC or GaN 300mm wafer supply... In fact, I don't even think you can get 200mm substrates with those materials. I think you can grow SiC epi on a silicon substrate, but I doubt that is an efficient way to make power devices. I'm no expert in power, though.

Flash Poll
Like Us on Facebook

Datasheets.com Parts Search

185 million searchable parts
(please enter a part number or hit search to begin)
EE Times on Twitter
EE Times Twitter Feed
Top Comments of the Week