Design Con 2015
Breaking News
News & Analysis

RRAM set to follow 3-D flash, says IMEC

10/12/2011 04:54 PM EDT
11 comments
NO RATINGS
Page 1 / 2 Next >
More Related Links
View Comments: Newest First | Oldest First | Threaded View
Page 1 / 2   >   >>
resistion
User Rank
CEO
re: RRAM set to follow 3-D flash, says IMEC
resistion   10/25/2011 3:22:42 PM
NO RATINGS
Maybe 11-14 nm is all there is left for conventional tech, and any new tech has to be supplemental.

docdivakar
User Rank
CEO
re: RRAM set to follow 3-D flash, says IMEC
docdivakar   10/25/2011 1:14:53 PM
NO RATINGS
Seems to me that the technology addressed in the article is 3 to 5 years away from mass production. In the meanwhile, will EUV be ready for the 14-11nm nodes? MP Divakar

sharps_eng
User Rank
Rookie
re: RRAM set to follow 3-D flash, says IMEC
sharps_eng   10/13/2011 9:03:34 PM
NO RATINGS
Do hard drives use flash much during everyday operations? They obviously have RAM caches but if you use them hard, reading/writing every bit repeatedly, e.g when recording pro video, they seem to 'wear out' quite quickly. Now I am wondering if there is some flash NV RAM used in the metadata and defect management that is getting thrashed due to the heavy drive activity?

jaybus0
User Rank
CEO
re: RRAM set to follow 3-D flash, says IMEC
jaybus0   10/13/2011 8:21:22 PM
NO RATINGS
Always true, but RRAM is expected to last at least 10^7 cycles. Flash is already down as far as 10^4 cycles beyond 22 nm.

resistion
User Rank
CEO
re: RRAM set to follow 3-D flash, says IMEC
resistion   10/13/2011 8:05:56 AM
NO RATINGS
That's also why flash has wear leveling.

resistion
User Rank
CEO
re: RRAM set to follow 3-D flash, says IMEC
resistion   10/13/2011 7:57:30 AM
NO RATINGS
Yet we let flash go on so long regardless?

Kinnar
User Rank
CEO
re: RRAM set to follow 3-D flash, says IMEC
Kinnar   10/13/2011 7:50:12 AM
NO RATINGS
The Life of the memory will be problem in RRAM as it is directly related with the property of the material and that will deteriorate with the usage. The life or the data retention capability of memory is the greatest factor behind the acceptability of any memory device.

resistion
User Rank
CEO
re: RRAM set to follow 3-D flash, says IMEC
resistion   10/13/2011 12:20:34 AM
NO RATINGS
Very true, in 3D Flash, the silicon body is no longer a blanket substrate but a long narrow (highly resistive) polysilicon nanowire. The voltage drop along the polysilicon channel wire (vertical or horizontal) will cause new operational complexity and incur cost previously not accounted for.

Deo Volente
User Rank
Rookie
re: RRAM set to follow 3-D flash, says IMEC
Deo Volente   10/12/2011 10:14:58 PM
NO RATINGS
Excellent article, and good explanation on BiCS, TCAT and SONOS architecture. Good job!

toom_tabard
User Rank
Manager
re: RRAM set to follow 3-D flash, says IMEC
toom_tabard   10/12/2011 8:23:44 PM
NO RATINGS
The vertical NAND SONOS architectures such as BiCS, pBiCS and TCAT have interesting challenges associated with them, namely (1) Disturbs during read since a relatively high voltage needs to be applied to all (but one) cells in the string while reading the one cell and (2)Vanishing string currents in the worst case condition when all cells are in the high threshold voltage state except the one being read. For those interested, there is data at http://www.schiltron.com/WhitePapers.html

Page 1 / 2   >   >>
Flash Poll
Like Us on Facebook

Datasheets.com Parts Search

185 million searchable parts
(please enter a part number or hit search to begin)
EE Times on Twitter
EE Times Twitter Feed
Top Comments of the Week