MANHASSET, NY -- A couple of late submissions to the upcoming IEEE International Electron Devices Meeting will detail record-breaking performance in transistors made from carbon and its derivatives.
IBM researchers will describe record RF performance from transistors made from synthesized graphene. The researchers achieved a 280-GHz cutoff frequency in a 40-nm gate-length FET, the fastest ever reported from synthesized graphene, according to IBM.
The second research paper from IBM outlines the first experimental demonstration of sub-10-nm transistors made from carbon nanotubes. The researchers built devices that achieved more than four times the current density (2.41 mA/Ķm) of the best competing silicon device, at a low operating voltage of 0.5 V. The researchers speculate that theoretical predictions were exceeded because the transistor gate modulates the charge not only in the channel but in the contact regions as well, which had not been considered previously.
The 2011 IEDM will be held in Washington, DC December 5-7.
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