Breaking News
News & Analysis

Globalfoundries' N.Y. kicks off production

1/9/2012 07:23 PM EST
3 comments
NO RATINGS
More Related Links
View Comments: Newest First | Oldest First | Threaded View
pinhead1
User Rank
Author
re: Globalfoundries' N.Y. kicks off production
pinhead1   1/10/2012 10:18:24 PM
NO RATINGS
My bet would be that they're farming out processors for gaming systems.

kingmouf
User Rank
Author
re: Globalfoundries' N.Y. kicks off production
kingmouf   1/10/2012 10:21:31 AM
NO RATINGS
I am wondering if they are fabbing the Power EN chips...

Lee Harrison
User Rank
Author
re: Globalfoundries' N.Y. kicks off production
Lee Harrison   1/9/2012 8:07:34 PM
NO RATINGS
IBM's 32nm eDRAM process was announced in 2009, but the question it would be interesting to know the answer to is WHAT "IBM chips with 32nm eDRAM on SOI" will GF be manufacturing ... which I doubt we will learn. These can't be Power7 ... that's 45nm, and I doubt IBM would farm those out in any event. These are likely IBM-contracted merchant ASICs , and what they are and where they are going and why IBM is willing to see GF fab them is the interesting story as I see it ... all details we'll likely not be told.

Most Recent Comments
michigan0
 
SteveHarris0
 
realjjj
 
SteveHarris0
 
SteveHarris0
 
VicVat
 
Les_Slater
 
SSDWEM
 
witeken
Most Recent Messages
9/25/2016
4:48:30 PM
michigan0 Sang Kim First, 28nm bulk is in volume manufacturing for several years by the major semiconductor companies but not 28nm FDSOI today yet. Why not? Simply because unlike 28nm bulk the LDD(Lightly Doped Drain) to minimize hot carrier generation can't be implemented in 28nm FDSOI. Furthermore, hot carrier reliability becomes worse with scaling, That is the major reason why 28nm FDSOI is not manufacturable today and will not be. Second, how can you suppress the leakage currents from such ultra short 7nm due to the short channel effects? How thin SOI thickness is required to prevent punch-through of un-dopped 7nm FDSOI? Possibly less than 4nm. Depositing such an ultra thin film less then 4nm filum uniformly and reliably over 12" wafers at the manufacturing line is extremely difficult or not even manufacturable. If not manufacturable, the 7nm FDSOI debate is over!Third, what happens when hot carriers are generated near the drain at normal operation of 7nm FDSOI? Electrons go to the positively biased drain with no harm but where the holes to go? The holes can't go to the substrate because of the thin BOX layer. Some holes may become trapped at the BOX layer causing Vt shift. However, the vast majority of holes drift through the the un-dopped SOI channel toward the N+Source,...

Datasheets.com Parts Search

185 million searchable parts
(please enter a part number or hit search to begin)
Like Us on Facebook
EE Times on Twitter
EE Times Twitter Feed