Breaking News
News & Analysis

RDA buys Chinese IP to broaden cell phone offering

3/27/2012 04:39 PM EDT
6 comments
NO RATINGS
More Related Links
View Comments: Newest First | Oldest First | Threaded View
jefffime
User Rank
Author
re: RDA buys Chinese IP to broaden cell phone offering
jefffime   4/2/2012 4:30:24 PM
NO RATINGS
RDA stands for Radio&Digital&Analog

old account Frank Eory
User Rank
Author
re: RDA buys Chinese IP to broaden cell phone offering
old account Frank Eory   3/29/2012 11:18:38 PM
NO RATINGS
Hard to say, but maybe you're onto something. A trip through their website and Googling their name gives no indication of what if anything "RDA" might stand for.

microe
User Rank
Author
re: RDA buys Chinese IP to broaden cell phone offering
microe   3/29/2012 7:59:49 PM
NO RATINGS
wonder why you are so sure the name must be from RCA. how many young people in US know RCA at all, not to mention overseas

defendor
User Rank
Author
re: RDA buys Chinese IP to broaden cell phone offering
defendor   3/29/2012 8:29:08 AM
NO RATINGS
RDA, That's obviously the RCA brandname changed by one letter. lol...not sure why they would want to rip off an old US TV and radio brandname. Some better choice of company names in my opinion: RONY, RANISONIC, RAMSUNG, RANYO...

chanj0
User Rank
Author
re: RDA buys Chinese IP to broaden cell phone offering
chanj0   3/27/2012 9:29:18 PM
NO RATINGS
What are the IPs RDA going after? Nonetheless, for a Chinese company to buy another Chinese company for the IPs, does it mean an improvement of respecting Intellectual Property?

goafrit
User Rank
Author
re: RDA buys Chinese IP to broaden cell phone offering
goafrit   3/27/2012 9:00:44 PM
NO RATINGS
That is a lot of money for a largely commodity business in this age.

Most Recent Comments
michigan0
 
SteveHarris0
 
realjjj
 
SteveHarris0
 
SteveHarris0
 
VicVat
 
Les_Slater
 
SSDWEM
 
witeken
Most Recent Messages
9/25/2016
4:48:30 PM
michigan0 Sang Kim First, 28nm bulk is in volume manufacturing for several years by the major semiconductor companies but not 28nm FDSOI today yet. Why not? Simply because unlike 28nm bulk the LDD(Lightly Doped Drain) to minimize hot carrier generation can't be implemented in 28nm FDSOI. Furthermore, hot carrier reliability becomes worse with scaling, That is the major reason why 28nm FDSOI is not manufacturable today and will not be. Second, how can you suppress the leakage currents from such ultra short 7nm due to the short channel effects? How thin SOI thickness is required to prevent punch-through of un-dopped 7nm FDSOI? Possibly less than 4nm. Depositing such an ultra thin film less then 4nm filum uniformly and reliably over 12" wafers at the manufacturing line is extremely difficult or not even manufacturable. If not manufacturable, the 7nm FDSOI debate is over!Third, what happens when hot carriers are generated near the drain at normal operation of 7nm FDSOI? Electrons go to the positively biased drain with no harm but where the holes to go? The holes can't go to the substrate because of the thin BOX layer. Some holes may become trapped at the BOX layer causing Vt shift. However, the vast majority of holes drift through the the un-dopped SOI channel toward the N+Source,...

Datasheets.com Parts Search

185 million searchable parts
(please enter a part number or hit search to begin)
Like Us on Facebook
EE Times on Twitter
EE Times Twitter Feed