LONDON – Mosaid Technologies Inc., a licensor of memory-related semiconductor intellectual property, has announced that it is now sampling a 16-die stacked NAND flash memory component with a memory capacity of 512-Gbits.
All 16 die in the multi-chip package (MCP) are connected to a single byte-wide HyperLink channel that offers 333-Mbytes per second data rate, Mosaid (Ottawa, Ontario) said.
Data bandwidth advantages are claimed for Mosaid's HyperLink technology and it is offered as a method for system engineers to design gigabyte per second bandwidth and terabyte capacity solid state drives (SSDs) with a single controller chip.
The component combines a stack of 16 industry-standard 32-Gbit NAND flash memory die with two HyperLink NAND (HLNAND) interface devices to achieve the data rate. Conventional NAND flash MCP designs cannot stack more than four NAND die without suffering from performance degradation, and would require two or more channels to deliver similar throughput, Mosaid said.
The MCP offers 333-Mbyte/s data rate at 1.8-V operation in simultaneous read and write directions. The component is packaged in a 100-ball BGA package measuring 18-mm by 14-mm.
"The 16-die stack 512-Gbit HLNAND MCP demonstrates the superior scalability of HLNAND's ring architecture compared to the parallel bus architecture used in industry standard NAND Flash products," said Jin-Ki Kim, vice president of R&D at Mosaid, in a statement. "HLNAND's ring architecture allows a virtually unlimited number of NAND die to be connected on a single channel without performance degradation."
Related links and articles:
Mosaid claims new flash interface offers 10x boost
First 3-D IC spec set for release
Mosaid bought by finance firm for $570 million