Design Con 2015
Breaking News
News & Analysis

Intel's FinFETs are less fin and more triangle

5/17/2012 11:39 AM EDT
19 comments
NO RATINGS
More Related Links
View Comments: Newest First | Oldest First | Threaded View
Page 1 / 2   >   >>
resistion
User Rank
CEO
re: Intel's FinFETs are less fin and more triangle
resistion   6/25/2012 1:31:32 PM
NO RATINGS
At VLSI, it was revealed the fins had 30 nm half pitch. So Intel has entered high volume double patterning, without much complaint. 14 nm should see several double patterning layers.

Peter Clarke
User Rank
Blogger
re: Intel's FinFETs are less fin and more triangle
Peter Clarke   5/21/2012 2:58:54 PM
NO RATINGS
The original explanation from Intel, why back when, was that the gate wrapped around three-sides of the rectangular cross-section fin. If the fin is trapezoidal then tri-gate name is still ok, but if that fin is triangular in cross-section then perhaps Intel should go with bi-gate?

jeremybirch
User Rank
CEO
re: Intel's FinFETs are less fin and more triangle
jeremybirch   5/21/2012 8:18:34 AM
NO RATINGS
perhaps it just explains the name "tri-gate" ie triangle gate - what else could it have stood for?

Chipguy1
User Rank
CEO
re: Intel's FinFETs are less fin and more triangle
Chipguy1   5/19/2012 7:05:03 PM
NO RATINGS
Makes sense. Consistent with a) Intels 22nm chip voltage was raised to slightly greater than 1V vs foundry mobile parts that run 0.85 to 0.9V b) intel 22nm parts having high leakage / leakage power. I hope GSS publishes more on this topic. Very good work and helpful.

m-Roberts
User Rank
Rookie
re: Intel's FinFETs are less fin and more triangle
m-Roberts   5/19/2012 5:28:43 PM
NO RATINGS
I spoke to my go to fab guy He said the fin shape results from a gross electrical compromise to clear spacer off fin (required for the si and SiGe fin epitaxy). Vertical fins create better electrical uniformity and performance. But its very difficult to clear spacer off a vertical fin. He does not think this fin shape will work for foundry SOC chips. Too much electrical variation and leakage

motti2
User Rank
Rookie
re: Intel's FinFETs are less fin and more triangle
motti2   5/19/2012 12:06:10 AM
NO RATINGS
the other driver for a tapered triangular Silicon FIN is to avoid / minimize ion implant shadowing in the source drain / graded drain ion implants ( if implanted ). A vertical FIN sidewall would likely introduce asymmetric and wafer rotational dependence on Source Drain offset with respect to the edge of the FIN channel. Another process latitude driver for FIN triangular shape.... ( ie not merely metrology )

Chipguy1
User Rank
CEO
re: Intel's FinFETs are less fin and more triangle
Chipguy1   5/18/2012 3:43:12 PM
NO RATINGS
Agree. Lower transistor threshold voltage results in faster but leaker part. If intel was taking all trigate leakage improvement and targeting performance, I don't understand why performance and or frequency is about the same? Ivy bridge frequency bins are only ~100Mhz higher vs 32nm sandy bridge. Clock frequency of 3.4 vs 3.5Ghz or performance benchmarking is less than I was expecting. I still wonder if this trigate is really going to give intel a competitive advantage in mobile? Or is intel marketing misdirecting from their own short comings. Stock analysts in my opinion are often wrong but when I look at the data I think Gus Richards might be right. http://www.forbes.com/sites/ycharts/2012/05/18/qualcomm-vs-intel-in-mobile-chips-somebodys-about-to-get-hurt/?partner=yahootix Trigate has higher processing cost and extra design restriction (increases cost via larger die area). I looked at designing my I/O block with finfet (foundries name for trigate). Layout was larger (higher cost) and at block level my power was higher. It will be interesting to watch if intel can make a better cell phone or tablet chip. But they better hurry since 28nm chips with improved power are ramping fast.

resistion
User Rank
CEO
re: Intel's FinFETs are less fin and more triangle
resistion   5/18/2012 1:18:04 PM
NO RATINGS
You'd figure with an etch mask, there should still be sharp top corners.

ChrisGar
User Rank
Rookie
re: Intel's FinFETs are less fin and more triangle
ChrisGar   5/18/2012 1:11:13 PM
NO RATINGS
Finfets should provide power/perforamance advantage. Intel probably set their process to fit within a given power budget -- get as much performance as possible within that limit. For example, lower transistor threshold voltages -- faster & more leakage. Intel would set process knobs like this to get as much performance as possible without blowing power limit. For low power parts, Intel could set these knobs differently.

Peter Clarke
User Rank
Blogger
re: Intel's FinFETs are less fin and more triangle
Peter Clarke   5/18/2012 9:33:12 AM
NO RATINGS
in elevation but not in cross-section

Page 1 / 2   >   >>
Radio
LATEST ARCHIVED BROADCAST
EE Times Senior Technical Editor Martin Rowe will interview EMC engineer Kenneth Wyatt.
Top Comments of the Week
Like Us on Facebook

Datasheets.com Parts Search

185 million searchable parts
(please enter a part number or hit search to begin)
EE Times on Twitter
EE Times Twitter Feed
Flash Poll