Breaking News
News & Analysis

Intel confirms Ireland for 14-nm silicon

5/27/2012 04:02 PM EDT
24 comments
NO RATINGS
More Related Links
View Comments: Newest First | Oldest First | Threaded View
<<   <   Page 2 / 3   >   >>
seaEE
User Rank
Author
re: Intel confirms Ireland for 14-nm silicon
seaEE   5/29/2012 3:52:24 AM
NO RATINGS
Luck O' the Irish! ;) It didn't seem many years ago when the term "sub-micron" was used. And now we are working on 14nm...

m00nshine
User Rank
Author
re: Intel confirms Ireland for 14-nm silicon
m00nshine   5/29/2012 3:25:49 AM
NO RATINGS
"Outsourcing" makes it sound like intel Ireland is not part of intel Corp (not true). That being said 14nm is already slated for 2 US fabs...

daleste
User Rank
Author
re: Intel confirms Ireland for 14-nm silicon
daleste   5/29/2012 2:11:13 AM
NO RATINGS
I understand outsourcing, but I'm not sure i understand why this would go to Ireland and not the US or Asia.

resistion
User Rank
Author
re: Intel confirms Ireland for 14-nm silicon
resistion   5/29/2012 1:22:12 AM
NO RATINGS
Yes, my other impression was that Ireland had tough breaks in previous bids for 22 nm, 32 nm, and 45 nm, losing to Israel and US sites. And IIRC, they were downsized? So maybe now, there can be hirebacks.

Kinnar
User Rank
Author
re: Intel confirms Ireland for 14-nm silicon
Kinnar   5/28/2012 7:13:53 PM
NO RATINGS
1 billion US$ is a very huge amount Intel has invested in Ireland. It is a great luck for the people of Ireland that they will be able to participate in Research and Development with a great company.

KB3001
User Rank
Author
re: Intel confirms Ireland for 14-nm silicon
KB3001   5/28/2012 3:18:15 PM
NO RATINGS
It's just talk resistion. By then things could change of course.

KB3001
User Rank
Author
re: Intel confirms Ireland for 14-nm silicon
KB3001   5/28/2012 3:16:57 PM
NO RATINGS
Not sure the Irish Government can do a lot on this front these days :-) It's a logical decision considering the alternatives. They needed the fab to be in Europe and Ireland is the logical conclusion given their existing infrastucture there.

resistion
User Rank
Author
re: Intel confirms Ireland for 14-nm silicon
resistion   5/28/2012 2:42:51 PM
NO RATINGS
Previously, the new fabs were viewed one node at a time, like just 32 nm, or just 22 nm. How can you plan its use for N+2, when the modules have not even been defined yet.

Peter Clarke
User Rank
Author
re: Intel confirms Ireland for 14-nm silicon
Peter Clarke   5/28/2012 2:08:40 PM
NO RATINGS
I am not sure how you draw the conclusion about equipment changes. To me it merely means that these factories will be used to produce silicon at 14-nm and node(s) beyond 14-nm, such as 11-nm.

agk
User Rank
Author
re: Intel confirms Ireland for 14-nm silicon
agk   5/28/2012 1:58:22 PM
NO RATINGS
The government and the Industrial Development Agency offer competitive financial and tax incentives.Also quality educated people are there. So Intel is in Ireland.

<<   <   Page 2 / 3   >   >>
Most Recent Comments
michigan0
 
SteveHarris0
 
realjjj
 
SteveHarris0
 
SteveHarris0
 
VicVat
 
Les_Slater
 
SSDWEM
 
witeken
Most Recent Messages
9/25/2016
4:48:30 PM
michigan0 Sang Kim First, 28nm bulk is in volume manufacturing for several years by the major semiconductor companies but not 28nm FDSOI today yet. Why not? Simply because unlike 28nm bulk the LDD(Lightly Doped Drain) to minimize hot carrier generation can't be implemented in 28nm FDSOI. Furthermore, hot carrier reliability becomes worse with scaling, That is the major reason why 28nm FDSOI is not manufacturable today and will not be. Second, how can you suppress the leakage currents from such ultra short 7nm due to the short channel effects? How thin SOI thickness is required to prevent punch-through of un-dopped 7nm FDSOI? Possibly less than 4nm. Depositing such an ultra thin film less then 4nm filum uniformly and reliably over 12" wafers at the manufacturing line is extremely difficult or not even manufacturable. If not manufacturable, the 7nm FDSOI debate is over!Third, what happens when hot carriers are generated near the drain at normal operation of 7nm FDSOI? Electrons go to the positively biased drain with no harm but where the holes to go? The holes can't go to the substrate because of the thin BOX layer. Some holes may become trapped at the BOX layer causing Vt shift. However, the vast majority of holes drift through the the un-dopped SOI channel toward the N+Source,...

Datasheets.com Parts Search

185 million searchable parts
(please enter a part number or hit search to begin)
Like Us on Facebook
EE Times on Twitter
EE Times Twitter Feed