Samsung, and Micron Technologies Inc. through its acquisition of Numonyx NV, are the two companies that have got close to offering non-volatile phase change memory for commercial use. Micron is offering serial and parallel versions of a 128-Mbit PCM. However, there are almost no reports of phase-change memories in the field.
"Alongside STT-MRAM and ReRAM currently under joint development with Toshiba and HP respectively, PCRAM will enrich our portfolio of next-generation memory technologies. SK Hynix will continue to endeavor to seek possible partnerships that will elevate our competence in the ever evolving semiconductor industry," said Hyun Jong Song, senior vice president and head of the future strategy division at SK Hynix, in a statement.
"Phase-change memory technology has the potential to enable a new class of low-cost, high-performance memory technologies for consumer devices, cloud computing, data storage and other enterprise applications," said T.C. Chen, IBM Fellow and vice president of science and technology for IBM Research, in a statement issued by SK Hynix. "Working with SK Hynix will speed the development and production of PCRAM devices based on our breakthrough multi-bit, phase-change memory technology," he added.
"PCRAM may be able to reshape the landscape of the memory industry by introducing storage-class memory (SCM), a promising next generation memory class, designed to boost performance and reduce power consumption for enterprise servers. PCRAM will bridge a gap between the current DRAM and solid-state drives (SSDs) as it takes the role of a buffer memory," SK Hynix said in the statement.
The memory opportunity for servers, which includes DRAM and SSD, will expand from $8 billion in 2012 to $16 billion in 2016, and the SCM opportunity at that time, driven by demand for PCRAM from server makers, will be worth $1.4 billion and continue to grow for years thereafter, SK Hynix said referencing market researcher Gartner Inc. as its source.
Related links and articles:
CTO confirms IBM's PCM expectations
IBM reports drift-tolerant multilevel cell PCM
ISSCC: Samsung preps 8-Gbit phase-change memory
UK researchers follow silicon-oxide ReRAM route
HP responds to memristor debate
See also Ron Neale's series of examinations of PCM developments
PCM Progress Report No. 7: A view of Samsung's 8-Gb array
PCM Progress Report No. 6: Afterthoughts, part II
PCM Progress Report No. 6: Afterthoughts
PCM Progress Report No 5: SSDs, MLC, and scaling
PCM Progress Report No 4: Brains
PCM Progress Report No 3: A new direction using polyamorphic states
PCM Progress Report, part 2
PCM Progress Report: Temperatures rise and constituents on the move
These were preceeded by:
PCM Scalability: Is WAL-PCM the salvation? (part 3)
PCM Scalability: The Myth (part 2)
PCM Scalability: Myth or realistic device projection