Breaking News
News & Analysis

Toshiba cuts NAND production by 30%

7/25/2012 04:51 AM EDT
5 comments
NO RATINGS
More Related Links
View Comments: Newest First | Oldest First | Threaded View
resistion
User Rank
Author
re: Toshiba cuts NAND production by 30%
resistion   7/27/2012 7:25:40 AM
NO RATINGS
It means they are going to introduce the next node shortly (in the existing fabs). Otherwise the existing 19 nm and 24 nm will be impossible to sell.

geekmaster
User Rank
Author
re: Toshiba cuts NAND production by 30%
geekmaster   7/25/2012 6:27:18 PM
NO RATINGS
I understand that begin of this year Sandisk paused Fab 5 capacity expansion until about mid of this year. I wonder if this is still paused. That would mean no new capacity in Fab 5.

mcgrathdylan
User Rank
Author
re: Toshiba cuts NAND production by 30%
mcgrathdylan   7/25/2012 4:05:18 PM
NO RATINGS
Toshiba says demand is projected to increase and that they will increase production before that happens so they can be ready for it. I think the demand has been strong, but there are just too many parts being produced. It's typical of cyclicality in memory chips--when demand is there they scramble to build more capacity, only to pay the price when supply ends up exceeding demand. Not a business for the weak of heart.

elctrnx_lyf
User Rank
Author
re: Toshiba cuts NAND production by 30%
elctrnx_lyf   7/25/2012 12:20:34 PM
NO RATINGS
So does it signify any point regarding the reduction in demand for the NAND memory. I believe with the growing sales of tablets and smart phones there shouldn't be any inventory build at the manufacturers.

eewiz
User Rank
Author
re: Toshiba cuts NAND production by 30%
eewiz   7/25/2012 12:16:13 PM
NO RATINGS
I understand the pricing pressure on NAND flash now. But aint making such press statements considered market signaling to the competition to reduce production and charge consumer more OR a price fixing tactic?

Most Recent Comments
michigan0
 
SteveHarris0
 
realjjj
 
SteveHarris0
 
SteveHarris0
 
VicVat
 
Les_Slater
 
SSDWEM
 
witeken
Most Recent Messages
9/25/2016
4:48:30 PM
michigan0 Sang Kim First, 28nm bulk is in volume manufacturing for several years by the major semiconductor companies but not 28nm FDSOI today yet. Why not? Simply because unlike 28nm bulk the LDD(Lightly Doped Drain) to minimize hot carrier generation can't be implemented in 28nm FDSOI. Furthermore, hot carrier reliability becomes worse with scaling, That is the major reason why 28nm FDSOI is not manufacturable today and will not be. Second, how can you suppress the leakage currents from such ultra short 7nm due to the short channel effects? How thin SOI thickness is required to prevent punch-through of un-dopped 7nm FDSOI? Possibly less than 4nm. Depositing such an ultra thin film less then 4nm filum uniformly and reliably over 12" wafers at the manufacturing line is extremely difficult or not even manufacturable. If not manufacturable, the 7nm FDSOI debate is over!Third, what happens when hot carriers are generated near the drain at normal operation of 7nm FDSOI? Electrons go to the positively biased drain with no harm but where the holes to go? The holes can't go to the substrate because of the thin BOX layer. Some holes may become trapped at the BOX layer causing Vt shift. However, the vast majority of holes drift through the the un-dopped SOI channel toward the N+Source,...

Datasheets.com Parts Search

185 million searchable parts
(please enter a part number or hit search to begin)
Like Us on Facebook
EE Times on Twitter
EE Times Twitter Feed