LONDON – Intel Corp. (Santa Clara, Calif.) has announced the integration of a 3G HSPA radio frequency transceiver with power amplifiers on a single 65-nm die.
The chip is designed in a standard 65-nm foundry process as offered by GlobalFoundries, Taiwan Semiconductor Manufacturing Co. Ltd. and United Microelectronics Corp., said Stefan Wolff, vice president of the Intel Architecture Group, in email correspondence with EE Times.
The Smarti brand is used for all Intel mobile communications cellular RF transceiver products and was established more than 10 years ago by Infineon Technologies AG. The brand was acquired by Intel with the Infineon wireless business unit.
The SMARTi UE2p integrates power management and sensors and allows direct connection to the battery. The chip supports multiple 3G dual-band configurations for use with Intel's HSPA modem chips.
"This will allow our customers to introduce lower-cost 3G handsets and support the transition of the machine-to-machine market segment toward 3G-based connected devices to help enable the Internet of things," said Wolff.
The Smarti UE2 is proven product that has shipped in various high end smartphones, UE2 stands for UMTS/EDGE 2nd generation. The p has been added for the integrated 3G power amplifiers.
A specification is available but only under a non-disclosure agreement and for selected customers, Wolff told EE Times. The specification is not intended to be published.
Intel said the Smarti UE2p chip would be available as samples in the fourth quarter of 2012.
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