Breaking News
News & Analysis

Rambus cutting 15% of workforce

8/22/2012 09:42 PM EDT
3 comments
NO RATINGS
More Related Links
View Comments: Threaded | Newest First | Oldest First
elctrnx_lyf
User Rank
Author
re: Rambus cutting 15% of workforce
elctrnx_lyf   8/23/2012 7:41:51 AM
NO RATINGS
Is 250 jobs are really significant portion of Rambus? There seems to many changes to key positions with in Rambus.

mcgrathdylan
User Rank
Author
re: Rambus cutting 15% of workforce
mcgrathdylan   8/23/2012 5:51:14 PM
NO RATINGS
@elctrnx_lyf- I think you might be mixing up the 15% reduction at Rambus with the 250 job cuts at ON Semiconductor. Rambus has about 500 employees; 15% is about 75 jobs. ON Semi has something like 20,000 employees, so it's 250 job cuts translate into a lower percentage. Is 15% significant? I would say so. And for any of the people losing their jobs at ON Semi, Rambus, or elsewhere, it's pretty significant, regardless of the percentage.

selinz
User Rank
Author
re: Rambus cutting 15% of workforce
selinz   8/24/2012 11:57:05 PM
NO RATINGS
"It's not personal, it's business." (pick either Godfather or You've Got Mail for context.)

Most Recent Comments
michigan0
 
SteveHarris0
 
realjjj
 
SteveHarris0
 
SteveHarris0
 
VicVat
 
Les_Slater
 
SSDWEM
 
witeken
Most Recent Messages
9/25/2016
4:48:30 PM
michigan0 Sang Kim First, 28nm bulk is in volume manufacturing for several years by the major semiconductor companies but not 28nm FDSOI today yet. Why not? Simply because unlike 28nm bulk the LDD(Lightly Doped Drain) to minimize hot carrier generation can't be implemented in 28nm FDSOI. Furthermore, hot carrier reliability becomes worse with scaling, That is the major reason why 28nm FDSOI is not manufacturable today and will not be. Second, how can you suppress the leakage currents from such ultra short 7nm due to the short channel effects? How thin SOI thickness is required to prevent punch-through of un-dopped 7nm FDSOI? Possibly less than 4nm. Depositing such an ultra thin film less then 4nm filum uniformly and reliably over 12" wafers at the manufacturing line is extremely difficult or not even manufacturable. If not manufacturable, the 7nm FDSOI debate is over!Third, what happens when hot carriers are generated near the drain at normal operation of 7nm FDSOI? Electrons go to the positively biased drain with no harm but where the holes to go? The holes can't go to the substrate because of the thin BOX layer. Some holes may become trapped at the BOX layer causing Vt shift. However, the vast majority of holes drift through the the un-dopped SOI channel toward the N+Source,...

Datasheets.com Parts Search

185 million searchable parts
(please enter a part number or hit search to begin)
Like Us on Facebook
EE Times on Twitter
EE Times Twitter Feed