Although Globalfoundries competes head to head with TSMC, UMC and other dedicated foundries, Jelinek maintains that the company's primary competition is Intel. Globalfoundries is now No. 2 in foundry sales, but the company still trails TSMC by a wide margin. Globalfoundries is seeking to establish itself as the process technology leader among foundries largely because its largest customer, Advanced Micro Devices Inc., is Intel's chief competitor in the market for PC processors.
"They are not going to try to grow and become No. 1 foundry player in
the world. They know they cannot get there," Jelinek said. "What they
can do is become the technology leader in the space, and that's what
they are trying."
According to G. Dan Hutcheson, chairman of market research and consulting firm VLSI Research Inc., no chip maker has ever moved to a new process technology node two years in a row. "if they can pull this off, it will be a tremendous achievement," Hutcheson said.
Subramani Kengeri, head of the advanced technology architecture for Globalfoundries' office of the CTO, said the similarities between the company's 20-nm low power process and the 14-nm XM process would enable customers to leverage much of the design work for the 20-nm process on the new process. About 7,000 design rules are the same between both processes, while about 60 new design rules will be added to account for the FinFET, Kengeri said.
The 14-nm XM process utilizes the same middle and back end of line processes as Globalfoundries' 20-nm low power process, which is set to go into production next year.
Technology development of
the 14-nm XM process is already underway, with test silicon running
through Globalfoundries' Fab 8 in upstate New York., the company said. Early
process design kits are available now, with customer product tape-outs
expected in 2013.
Globalfoundries should focus on being able to make 20nm planar work before they make promises on 14nm FinFET technologies, if they can't make 20nm planar devices work then 14nm FinFETs will be nearly impossible. Lots of smoke here ...... We will see if customers can tape out early designs in 2014 in 14nm.
Again, it is an EUV marketing chant. If with breakthrough, arrogant like ASML won't invite Intel,TSMC, Samsung to invest her recently. Intel even urged ASML to expedite ArF immersion development in 450mm lithograpgy. I guess we would stick on 20nm for a long while and 28nm or 20nm node would be a historically sweet spots for foundries.
The backers of Globalfoundries have deep pockets but I think competing with Intel is an unhealthy obsession for them. I like profitable foundries that keep the mature processes going so people can make lots of mixed-mode chips.
Maybe you better get some more details on this. You don't want longer pulse, you want larger duty cycle and shorter pulse duration. And it turns out the resist dose window will not even benefit from a power boost.
EUV little comprehended has found a breakthrough high average energy source ( ~100x greater than laser plasma EUV sources ) and you might end up eating your words in 2-3 years when the source integration is completed. There was an announcement by a U?Washington plasma physics prof about a Zpinch EUV plasma source ( discharge is magnetically confined by a current sheath ) that makes a simple longer pulse source of extraordinary net average power increase for EUV illumination.
I have little understanding of the technical issues relating to the source integration into the ASML EUV stepper, but the source itself is apparently a possibly compelling breakthrough.
Within weeks of disclosure of the source breakthrough by its professor inventor I think I remember that ASML issued an announcement that timeline for EUV "deployment" has been pulled in .... ( implying they will be using the source, but not mentioned at all )
I think there is a change that production viability prospects for EUV might have improved significantly, but this is as yet just decent speculation, based on ?coincidences of a technical nature ( from a process engineer )